Transistors - Bipolar (BJT) - RF

Power - Max：

Voltage - Collector Emitter Breakdown (Max)：

Frequency - Transition：

Noise Figure (dB Typ @ f)：

Gain：

Filter：

2 Records

Image	Part	Manufacturer	Description	MOQ		Stock	Action
	MT3S111(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	RF TRANS NPN 6V 11....	1	PDF RFQ	4,436 In-stock	Get Quote
	MT3S113(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	RF TRANS NPN 5.3V 1...	3,000	PDF RFQ	2,382 In-stock	Get Quote

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