Transistors - FETs, MOSFETs - Single - hsk electrinic

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Power Dissipation (Max)：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id, Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

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2 Records

Image	Part	Manufacturer	Description	MOQ		Stock	Action
	IRFS240B	Rochester Electronics	N-CHANNEL POWER ...	419	PDF RFQ	3,200 In-stock	Get Quote
	PHX34NQ11T,127	NXP Semiconductors	MOSFET N-CH 110V 24....	1	PDF RFQ	2,610 In-stock	Get Quote

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