- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 8mA, 10V
- Frequency - Transition :
- 2.1GHz
- Gain :
- 1.5dB
- Mounting Type :
- Through Hole
- Noise Figure (dB Typ @ f) :
- 6.5dB @ 60MHz
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Part Status :
- Obsolete
- Power - Max :
- 350mW
- Supplier Device Package :
- TO-92-3
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Datasheets
- 2N3663
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