- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 70mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 20mA, 5V
- Frequency - Transition :
- 7GHz
- Gain :
- 8.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 3-XFDFN
- Part Status :
- Obsolete
- Power - Max :
- 100mW
- Supplier Device Package :
- ECSP1006-3
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 10V
- Datasheets
- EC3H02BA-TL-H
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