RN1112MFV,L3F

Mfr.Part #
RN1112MFV,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
Download
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
100 mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Package / Case :
SOT-723
Part Status :
Active
Power - Max :
150 mW
Resistor - Base (R1) :
22 kOhms
Resistor - Emitter Base (R2) :
-
Supplier Device Package :
VESM
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
Datasheets
RN1112MFV,L3F

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