BSM180D12P2C101
- Mfr.Part #
- BSM180D12P2C101
- Manufacturer
- ROHM Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET 2N-CH 1200V 180A MODULE
- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 204A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 10V
- Mounting Type :
- -
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Part Status :
- Active
- Power - Max :
- 1130W
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- 4V @ 35.2mA
- Datasheets
- BSM180D12P2C101
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
BSM1-C | Panduit Corporation | 3,867 | CONN SPLICE 18-20 AWG CRIMP |
BSM1-X | Panduit Corporation | 4,104 | CONN SPLICE 18-20 AWG CRIMP |
BSM100 | Brady Corporation | 3,096 | RUG) BSM100 RUG, 36"X100' |
BSM100GAL120DLCKHOSA1 | Infineon Technologies | 2,275 | IGBT MOD 1200V 205A 835W |
BSM100GB120DLCHOSA1 | Rochester Electronics | 3,316 | BSM100GB120 - INSULATED GATE BIP |
BSM100GB120DLCHOSA1 | Infineon Technologies | 2,819 | IGBT MOD 1200V 100A 830W |
BSM100GB120DLCKHOSA1 | Infineon Technologies | 3,205 | IGBT MOD 1200V 100A 830W |
BSM100GB120DN2B2HOSA1 | Rochester Electronics | 2,695 | IGBT MODULE |
BSM100GB120DN2FE325HOSA1 | Rochester Electronics | 4,627 | BSM100GB120DN2 - IGBT MODULE |
BSM100GB120DN2HOSA1 | Rochester Electronics | 3,545 | MEDIUM POWER 62MM |
BSM100GB120DN2HOSA1 | Infineon Technologies | 4,693 | IGBT MOD 1200V 150A 800W |
BSM100GB120DN2K | Rochester Electronics | 3,662 | INSULATED GATE BIPOLAR TRANSISTO |
BSM100GB120DN2KHOSA1 | Infineon Technologies | 3,204 | IGBT MOD 1200V 145A 700W |
BSM100GB120DN2KHOSA1 | Rochester Electronics | 2,821 | MEDIUM POWER 34MM |
BSM100GB120DN2S7HOSA1 | Rochester Electronics | 3,426 | INSULATED GATE BIPOLAR TRANSISTO |