DTB543EMT2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

115 @ 100mA, 2V

Frequency - Transition :

260 MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-723

Part Status :

Active

Power - Max :

150 mW

Resistor - Base (R1) :

4.7 kOhms

Resistor - Emitter Base (R2) :

4.7 kOhms

Supplier Device Package :

VMT3

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

12 V