SSM6P39TU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

1.5A (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate, 1.8V Drive

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 4V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

6-SMD, Flat Leads

Part Status :

Active

Power - Max :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

213mOhm @ 1A, 4V

Supplier Device Package :

UF6

Vgs(th) (Max) @ Id :

1V @ 1mA