IPG20N06S4L14AATMA1

Mfr.Part #
IPG20N06S4L14AATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
MOSFET 2N-CH 60V 20A 8TDSON
Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
20A
Drain to Source Voltage (Vdss) :
60V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2890pF @ 25V
Mounting Type :
Surface Mount, Wettable Flank
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
8-PowerVDFN
Part Status :
Active
Power - Max :
50W
Rds On (Max) @ Id, Vgs :
13.7mOhm @ 17A, 10V
Supplier Device Package :
PG-TDSON-8-10
Vgs(th) (Max) @ Id :
2.2V @ 20µA
Datasheets
IPG20N06S4L14AATMA1

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