AFV09P350-04GNR3

Mfr.Part #
AFV09P350-04GNR3
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
Download
Description
RF POWER FIELD-EFFECT TRANSISTOR
Manufacturer :
Rochester Electronics
Product Category :
Transistors - FETs, MOSFETs - RF
Current - Test :
860 mA
Current Rating (Amps) :
-
Frequency :
920MHz
Gain :
19.5dB
Noise Figure :
-
Package / Case :
OM-780G-4L
Part Status :
Active
Power - Output :
100W
Supplier Device Package :
OM-780G-4L
Transistor Type :
LDMOS (Dual)
Voltage - Rated :
105 V
Voltage - Test :
48 V
Datasheets
AFV09P350-04GNR3

Manufacturer related products

Catalog related products

  • CEL (California Eastern Laboratories)
    RF MOSFET PHEMT FET 2V
  • CEL (California Eastern Laboratories)
    RF FET 4V 12GHZ 4MICROX
  • Mini-Circuits
    RF MOSFET E-PHEMT 3V SC70-4
  • Ampleon
    RF MOSFET LDMOS 28V SOT1483-1
  • STMicroelectronics
    FET RF 40V 500MHZ PWRSO10

Related products

Part Manufacturer Stock Description
AFV09P350-04GNR3 NXP Semiconductors 4,777 RF MOSFET LDMOS DL 48V OM780G-4L
AFV09P350-04NR3 NXP Semiconductors 2,820 FET RF 2CH 105V 920MHZ OM780-4