DMG3415UFY4Q-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.5A (Ta)

Drain to Source Voltage (Vdss) :

16 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

282 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-XDFN

Part Status :

Active

Power Dissipation (Max) :

650mW (Ta)

Rds On (Max) @ Id, Vgs :

39mOhm @ 4A, 4.5V

Supplier Device Package :

X2-DFN2015-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA