ZXMN2A02N8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8.3A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18.9 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1900 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Power Dissipation (Max) :

1.56W (Ta)

Rds On (Max) @ Id, Vgs :

20mOhm @ 11A, 4.5V

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

700mV @ 250µA